MOSFET increases power density in modern automotive applications

Diodes Incorporated now offers the PowerDI8080-5, an innovative high current, thermally efficient power package that satisfies the demands of EV applications. The first product to be released in the package is the DIODES DMTH4M70SPGWQ, a 40V automotive-compliant MOSFET that provides a typical RDS(ON) of only 0.54mOhm at a gate drive of 10V, while its gate charge is 117nC. This industry-leading performance allows designers of automotive high-power BLDC motor drives, DC-DC converters, and charging systems to maximise system efficiency while assuring power dissipation is held to an absolute minimum.

The package has a PCB footprint of 64mm², which is 40% less than that occupied by the TO263 (D2PAK) package format. It also offers an off-board profile of 1.7mm, 63% lower than that of a TO263. The copper clip bonding between the die and the terminals enables a low junction-to-case thermal resistance of 0.36C/W. This allows the package to handle currents up to 460A and produce a power density that is eight times greater than a TO263 package.

The package is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Its gull-wing leads facilitate AOI and improve temperature cycling reliability.