New Level 3 SPICE models featuring enhanced simulation speed

ROHM has announced the release of new Level 3 (L3) SPICE models, which deliver significantly improved convergence and faster simulation performance.

Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy through the design phase is critical. The company's earlier Level 1 SPICE models for SiC MOSFETs fulfilled this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the necessity for further refinement.

The new L3 models employ a simplified approach that maintains computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This enables high-accuracy transient analysis of the entire circuit at a particularly faster speed, streamlining device evaluation and loss assessment during the application design phase.

As of April 2025, the company has released 37 L3 models for its fourth-generation SiC MOSFETs, available for download directly from the 'Models & Tools' section of each product page. The L1 models will continue to be provided alongside the new versions. A comprehensive white paper is also provided to facilitate model adoption.