Power Integrations offers the SCALE EV family of gate-driver boards for Infineon EconoDUAL modules. Appropriate for original, clone and new SiC variants, the driver is aimed at high-power automotive and traction inverters for EV, hybrid and fuel-cell vehicles, including buses and trucks, and construction, mining and agricultural equipment.
The board-level gate drivers include two reinforced gate-drive channels, associated power supplies and monitoring telemetry. The new boards are automotive-qualified and ASIL B certified, facilitating the implementation of ASIL C traction inverter designs. The first family member to be released is the 2SP0215F2Q0C, created for the EconoDUAL 900 A 1200-volt IGBT half-bridge module.
Peter Vaughan, director of automotive business development at Power Integrations, said: "Gate-driver design is critical to both the performance and reliability of electric vehicles. By offering a product where the development, testing and qualification plus ASIL certification have already been done, we are dramatically reducing development time and cost."
The high level of integration provided by innovative new driver ICs allows the complete driver board, including gate power, to fit onto the outline of the power module while still delivering the spacing required for reinforced isolation according to the IEC 60664 standard. The ASIC package offers 11.4mm of creepage and clearance, specially designed to satisfy the requirements for 800V vehicle system voltages. Input and output lines to the system microcontroller are connected through two independent onboard connectors to fulfil functional safety requirements. A single 5V supply per channel is needed, with other isolated voltages generated on the board itself.
The gate-driver family is rated at 1200V for 400V and 800V systems and supports SiC MOSFETs and silicon IGBTs. The design carries a 5500m altitude rating and is optionally offered with conformal coating for technical cleanliness needs. The design incorporates a wide variety of protection provisions, including active short-circuit, active discharge of connected DC-link capacitor, overvoltage limitation through active gate control, a diagnostic function such as gate monitoring, signal transmission monitoring and on-chip temperature monitoring, and short-circuit and over-current response of lower than one microsecond for SiC MOSFETs and lower than three microseconds for IGBTs.