Infineon Technologies' growing portfolio of single-channel gate-driver ICs now includes the new EiceDRIVER 1EDB family of single-channel gate-driver IC providing galvanic input-to-output isolation of 3kVrms (UL 1577) that assures rugged ground-loop separation. Their CMTI exceeds 300V/ns, making these devices an excellent choice for hard switching applications allowing numerous topologies.
The new family comprises four parts (1EDB6275F, 1EDB7275F, 1EDB8275F and 1EDB9275F) and is optimised for both high/low-side applications. They can solve PCB-layout problems, common in high-power applications such as server and telecom SMPS and UPS systems. With the increased power-density requirement, EV-charging designs often need fast-switching power MOSFETs. Photovoltaic inverters take advantage of silicon carbide MOSFETs as they allow both lower switching losses and a notable step forward in power density. The new family satisfies all these applications, assuring high system efficiency and robust and safe system operation.
All products offer separate and very low ohmic (0.95Ohm) source and (0.48Ohm) sink outputs for ease of design, providing typical drive strengths of 5.4A peak source and 9.8A peak sink. This feature performs a vital role in decreasing the switching losses of power MOSFETs. The input-to-output propagation delay accuracy is +/-4ns serving to cut switching losses, which is crucial in fast-switching applications. The typical output stage clamping speed is as short as 20ns and supports functionally safe system operation, particularly throughout start-up.