High-voltage, dual-channel, isolated gate-driver for power conversion applications

06-03-2017 | Digikey | Power

IXYS Corporation has launched a 10A/4000V, dual-channel, isolated gate-driver, the IXIDM1401_1505_O, available now from Digi-Key. Built using the IX6610 and IX6611 gate-driver chipset, it allows a 3.3V MCU through a 4kV isolation barrier to control IGBTs and MOSFETs in the half-bridge configuration. The PWM signals can be as short as 500ns and there is no lower limit on the switching frequency. It is capable of driving high-power IGBT and MOSFET modules rated up to 1700V. The gate-driver core can support switching frequencies up to 250kHz. The two output channels are electrically isolated from each other and from the primary side. An internal power supply can provide up to 2W per channel of isolated power to drive both upper and lower IGBTs (or MOSFETs), effectively isolating the MCU from the high power circuitry. Operating from a single polarity 15V power source, it provides +15V/-5V and 10A peak current to the IGBT gates as well as +3.3V (at 50mA) to the corresponding controlling MCU. The device provides a complete dual-channel, gate-driver solution, best in class, outperforming existing solutions. This product is designed with all the necessary features such as short-circuit protection, undervoltage and overvoltage lockout protection, advanced active clamping, and supply voltage monitoring. It is well suited for digital power control, where a typical MCU, like the Zilog line of MCUs, can be used to provide the brains for controlling power modules. The gate-driver module enables a compact and low-profile design. It is well suited for such power conversion applications as inverters, isolated DC-DC converters, motor drives, UPS, renewable energy, traction, and medical.

By Electropages Admin