New 8mp device has improved near-infrared sensitivity for imaging and intelligent transportation systems
Design & Manufacture
ON Semiconductor’s new 8 megapixel (MP) KAI-08052 image sensor enhances imaging performance in demanding industrial applications with technology that improves the near-infrared sensitivity of CCD image sensors.
The image sensor provides up to twice the sensitivity in near-infrared wavelengths as the company’s standard Interline Transfer CCD pixel design. This enhanced sensitivity can be critical in applications such as scientific and medical imaging, where samples emit or fluoresce in NIR wavelengths; or in machine vision and intelligent transportation systems (ITS), where NIR illumination is often used to better examine an object or to isolate a vehicle’s license plate.
The new CCD pixel design used extends the electron capture region deeper in the silicon to better capture electrons generated by long wavelength photons. This deeper pixel well improves detection of NIR wavelengths by up to a factor of two depending on the specific wavelength studied.
“Camera manufacturers and end customers continue to confirm that products based on both CCD and CMOS technologies will be needed in these markets, making it important that we continue to develop and advance both of these technologies,” said Herb Erhardt, vice president and GM, industrial and security division, image sensor group at ON Semiconductor. “The KAI-08052 provides a significant improvement in NIR sensitivity compared to our standard pixel design, and we look forward to utilising this technology in additional products in the future.”
The device is available in a RoHS-compliant CPGA-67 package in Monochrome, Bayer Colour, and Sparse Colour configurations, and is fully pin compatible with the existing KAI-08051 image sensor as well as a full family of 5.5µm and 7.4µm CCD image sensors, enabling camera manufacturers to quickly adopt the new device.