New SPDT switch and isolated IGBT gate driver launched
Connectors, Switches & EMECH
Analog Devices has introduced an absorptive single-pole, double-throw (SPDT) switch specified for the 9kHz to 13GHz frequency band, with high isolation of 48dB and low insertion-loss of 0.6dB at 8GHz operation.
The HMC1118LP3DE is the first offering within ADI’s new RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages over legacy GaAs (gallium-arsenide) RF switches. These advantages include a settling time that is one hundred times faster than GaAs, robust ESD (electro-static discharge) protection (2000V vs. 250V compared to GaAs), and the ability to extend the switch’s low frequency-end one thousand times lower than GaAs while maintaining high linearity.
The HMC1118LP3DE also offers industry-leading RF power handling of 4W in through and 0.5W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part. The HMC1118LP3DE is optimized for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz. The combination of features suits the switch for demanding test and measurement, automated test equipment, defence electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches, says the company.