Insulated gate bipolar transistors for demanding switching applications
20-04-2015 |
Farnell element14
|
Semiconductors
Offering superior performance in demanding switching applications, ON
Semiconductor's Field Stop II series insulated gate bipolar transistors
(IGBT) are now available from Farnell element14.
The device's high performance is achieved through a robust and
cost-effective Field Stop II Trench construction, which offers both low
on-state voltage and minimal switching loss. Ultra-thin wafer and backside
processing is the enabling technology for reducing both conduction and
switching power conversion losses. Voltage options range from 600V to
1350V, while current ranges are from 15A to 75A at 100C.
These characteristics make the Field Stop II IGBTs well suited to
uninterruptible power supplies (UPS) and solar applications.