ROHM Semiconductor


GaN HEMTs adopted for AI server power supplies to improve efficiency

ROHM has reported that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions. Integrating ROHM's GaN HEMTs

Power | 10-03-2025

GaN HEMT offered in a compact and high-heat dissipation TOLL package

ROHM has developed 650V GaN HEMTs in the TOLL. package: the GNP2070TD-Z. Featuring a compact design with exceptional heat dissipation, high current capacity, and superior switching

Power | 03-03-2025

TVS diodes support high-speed CAN FD autonomous driving in-vehicle communication systems

ROHM has developed bidirectional TVS diodes compatible with CAN FD high-speed in-vehicle communication. Such protocols are seeing an increased demand in line with the ongoing advan

Semiconductors | 20-02-2025

Second gen audio DAC chip for hi-res audio playback with exclusive HD monaural mode

ROHM has developed the 32-bit D/A converter IC (DAC chip) and evaluation board designed for flagship models in the MUS-IC series optimised for high-resolution audio playback. Engin

Semiconductors | 27-01-2025

Smallest terahertz wave oscillation and detection devices

ROHM offers samples of the industry’s smallest terahertz (THz) wave oscillation and detection devices using semiconductor elements known as resonance tunnelling diodes (RTDs). Tera

Semiconductors | 17-01-2025

High power infrared laser diode improves measurement and resolution in LiDAR applications

ROHM has developed a high-output laser diode – RLD8BQAB3 – for use in ADAS equipped with LiDAR for distance measurement and spatial recognition. It will initially start supplying s

Automotive & Transport | 08-01-2025

SiC technology has been adopted in a series of AC/DC PSUs

ROHM has had its EcoSiC products, including SiC MOSFETs and SiC SBDs, in the COSEL HFA/HCA series of 3.5kW output AC/DC power supply units for three-phase applications. Including i

Power | 05-12-2024

New SiC SBDs for high voltage xEV systems

ROHM has developed surface mount SiC SBDs that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models – SCS2x

Semiconductors | 15-11-2024

IGBTs achieve leading low loss characteristics with high short-circuit tolerance

Contributes to higher efficiency in automotive electric compressors and inverters for industrial equipment ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 120

Power | 08-11-2024

New PWM controller ICs for power supply in multiple industrial applications

Supports a wide range of power transistors from Si MOSFETs and IGBTs to SiC MOSFETs, with built-in high-accuracy undervoltage prevention malfunction ROHM has developed external FET

Power | 11-10-2024

New N-channel MOSFETs offer high mounting reliability in automotive applications

ROHM has released N-channel MOSFETs – RF9x120BKFRA, RQ3xxx0BxFRA, RD3x0xxBKHRB – featuring low ON-resistance ideal for a variety of automotive applications, including motors for do

Power | 20-09-2024

Fourth generation SiC MOSFET adopted in three EV models

ROHM has announced the adoption of power modules equipped with fourth-generation SiC MOSFET bare chips for the traction inverters in three models of the ZEEKR EV brand from Zhejian

Power | 02-09-2024

Smallest CMOS op-amp optimised for smartphones and compact IoT devices

ROHM has developed an ultra-compact 1.8V-5V, rail-to-rail CMOS op–amp, the TLR377GYZ. It is optimised for amplifying signals from sensors such as temperature, pressure, and flow ra

Power | 02-08-2024