SiC N-channel switch for HV applications in vehicles

Rutronik's portfolio for automotive power electronics has been expanded with the BT2M12006R0TPA from Bosch. This is a powerful N-channel single switch based on SiC with a blocking voltage of 1200V, a maximum on-resistance of 6.7mΩ and minimal switching losses – even at high currents. Specifically developed for high-voltage applications in the automotive sector, the component combines high efficiency in a compact discrete package with AEC-Q101 qualification. Samples are available on request.

To support developers in developing customised control units, DSL employs Bosch's own SiC chips with second-generation dual-channel SiC trench gate technology. These are available as bare die in addition to the package variant. The compact DSL with integrated Kelvin source pin is designed for maximum scalability and provides a 750V variant in addition to the 1200V class for different system voltages in the e-mobility environment.

The combination of high scalability in a small footprint, thermal robustness and AEC-Q101 qualification makes the BT2M12006R0TPA an excellent choice for next-generation electric drive and vehicle applications.

Benefits at a glance:

• Drain-source voltage: 1200V
• Typical on-resistance (RDS(on)): 6.2mΩ at 140A/25C
• Power dissipation: up to 1011W
• Fast recovery
• Switching times: e.g. turn-on delay 183ns, rise time 55ns
• Gate charge (QG): 389nC (typ.)

Target automotive applications include traction applications, onboard chargers, DC-DC converters, electronic battery disconnect unit (eBDU), and inverters.