Transistors with low switch-on resistance for multiple industries

Rutronik has introduced the new 4th Gen N-Channel SiC power MOSFETs from ROHM. The power switching devices provide low switch-on resistance with improved short-circuit resistance, minimise switching losses by drastically reducing the gate-drain capacitance, and support the 15V gate-source voltage for even more energy savings and design freedom. Thanks to their high robustness, they are predestined for usage in EVs, industrial drives, and aerospace applications, among others. The MOSFETs are available together with the corresponding modules and drivers as well as the half-bridge evaluation boards, which support integration into customer applications.

ROHM possesses the entire manufacturing know-how for SiC MOSFETs, providing substrates, wafers, packaging, and testing from a single source. It offers discrete SiC MOSFETs, corresponding modules, driver components, and half-bridge evaluation boards.

The P04SCT4018KE-EVK-001 and P05SCT4018KR-EVK-001 half-bridge evaluation boards were developed for Gen 4 SiC MOSFETs in compact TO-247N and TO-247-4L housings, supporting the rapid implementation of new applications during development. Integrated gate drivers and peripheral circuits lower the workload for design and evaluation.

The HB2637L-EVK-301 evaluation board facilitates evaluations in various operating modes, including downward, upward, synchronous downward/upward, and inverter operation. It integrates two SiC MOSFETs, an isolated gate driver with a power supply, an LDO for a 5V supply, and easy-to-connect ports for PWM signals.

The BM61M41RFV-C gate driver features an isolation voltage of 3,750Vrms, an I/O delay time of 65ns, and a minimum input pulse width of 60ns. It is galvanically isolated and equipped with UVLO and the Miller clamping function. The component is AEC-Q100 qualified and UL1577 recognised.

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness compared to similar components. By drastically reducing parasitic effects, such as gate-drain capacitance, switching losses are reduced by up to 50%.

In contrast to the third generation SiC MOSFETs, the fourth generation supports a more flexible gate voltage range of 15 V to 18 V. This enables the development of a gate driver circuit that can also be used for IGBTs at high currents. The components can withstand a thermal load of up to +175C and can be easily connected and controlled in parallel.

They are lead-free and RoHS-compliant, making them ideal for use in automotive, industrial, and new energy applications, as well as in all future markets.

Typical application examples include EVs, chargers, DC-DC converters, photovoltaic inverters, industrial drives, and aerospace technology.