SiC Schottky diodes increase efficiency while improving electrical insulation

Vishay Intertechnology, Inc. offers three new Gen 3 650V and 1200V SiC Schottky diodes in the compact, low-profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2mm, the 1A VS-3C01EJ12-M3, 2A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behaviour to improve efficiency in high-speed, hard-switching power designs.

For high-voltage applications, the high creepage distance of the devices provides improved electrical isolation. Their SlimSMA HV package features a moulding compound with a high CTI of ≥600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95mm, compared to 2.3mm for competing SMA and SMB packages with a similar footprint.

Unlike silicon diodes, the new devices maintain a low capacitive charge of 7.2nC or less, regardless of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high-frequency applications. Additionally, the devices exhibit virtually no recovery tail, which further improves efficiency, while their MPS structure achieves a reduced forward voltage drop of 1.30V.

With a high operating temperature of +175C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 include bootstrap, anti-parallel, and PFC diodes for DC-DC and AC/DC converters in server power supplies, energy generation and storage systems, industrial drives and tools, and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.

RoHS-compliant and halogen-free, the diodes feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and fulfil the JESD 201 class 2 whisker test.