New radiation-hardened GaN transistors include one of the first DLA JANS-certified GaN device

Infineon Technologies AG has announced the first of a new family of radiation-hardened GaN transistors, fabricated at its own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the latest product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the US Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and deep-space probes. Combining the robust performance of GaN HEMTs with the company's 50+ years of experience in high-reliability applications, the new power transistors provide best-in-class efficiency, thermal management, and power density for smaller, lighter, and more reliable space designs. The devices complement its proven legacy radiation-hardened silicon MOSFET portfolio, supplying customers with access to a full catalogue of power solutions for space applications.

"The Infineon team continues to push the limits of power design with our new GaN transistor line," said Chris Opoczynski, senior vice president and general manager HiRel, at Infineon. "This milestone brings the next generation of high-reliability power solutions for mission-critical defence and space applications that utilise the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market."

The first three product variations in the new radiation-hardened GaN transistor line are 100V, 52A devices featuring an industry-leading (R DS(on) (drain source on resistance) of 4mΩ (typical) and total gate charge (Qg) of 8.8nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a TID of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.

The company is the first in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification demands rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications – making it a leader in GaN for high-reliability applications. The company is also running multiple lots before the full JANS production release to ensure long-term manufacturing reliability.

Engineering samples and evaluation boards are available immediately, with the final JANS device scheduled for release in the summer of 2025.