New MOSFET in Source-Down packaging meets power demands in AI servers

Alpha and Omega Semiconductor Limited (AOS) has introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the device provides features that meet the needs of AI servers and data centre power distribution. Its Source-Down packaging technology provides a larger source contact to the PCB, and its centre gate pin layout facilitates easier routing on the PCB, thereby minimising the gate driver connection.

Offering outstanding current handling capabilities, the MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip allows continuous current capabilities up to 319A with a maximum junction temperature rated at 175C. This offers significant potential for system-level improvements, such as enhanced thermal management, which enables higher power density and greater efficiency.

“AONK40202, which utilises advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. The AONK40202, with its lower on-state resistance (RDS(on)) and enhanced thermal performance, provides designers with the advanced technologies necessary to utilise PCB space more effectively. These features and many more in the AONK40202 are specifically designed to meet the increasing power density demands of AI servers,” said Peter H. Wilson, senior director of the MOSFET product line at AOS.