High-side and low-side gate driver for high-frequency power applications

Littelfuse, Inc. has released the IXD2012NTR, a high-speed, high-side and low-side gate driver created to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The device is optimised for high-frequency power applications, providing superior switching performance and improved design flexibility.

The device operates over a wide 10V to 20V voltage range and supports a high-side switch to 200V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3V, ensuring seamless integration with a broad range of control devices. With a 1.9A source and 2.3A sink output capability, the device supplies robust gate drive currents that are excellent for high-speed switching applications.

The device's integrated cross-conduction protection logic prevents the high and low-side outputs from turning on simultaneously while simplifying circuit design through a high level of integration. The device delivers reliable performance even in harsh environments, offered in a compact SOIC(N)-8 package and operational over a temperature range of −40C to +125C.

"The IXD2012NTR is a direct drop-in replacement to popular, industry-standard gate driver devices," said June Zhang, product manager, Integrated Circuits Division of Littelfuse Semiconductor Business Unit. "This addition to our portfolio provides customers with a reliable, alternate source to meet demanding production schedules while delivering exceptional high-speed performance."

The IXD2012NTR improves the company's portfolio of high and low-side gate drivers by offering a new 200V device. It supports various high-frequency applications, including DC-DC converters, AC/DC inverters, motor controllers, Class-D power amplifiers.