New GaN driver IC designed to drive GaN HEMTs

Innoscience Technology has announced the INS1001DE designed to drive single-channel GaN HEMTs in low-side, high-side, or secondary-side SR applications.

Min Chen, VP of IC Design at Innoscience, comments: “The INS1001DE is perfectly matched to optimise the performance of e-mode GaN HEMTs and particularly Innoscience’s e-mode InnoGaN. A strong driving capability and fast propagation delay, along with input noise deglitching and built-in UVLO, OVP, OTP protection features, make the INS1001DE extremely suitable for high power, high frequency, and robust power GaN applications.”

The new gate driver has dual non-inverting and inverting PWM inputs, allowing flexible operation with controller, opto-coupler and digital isolator. Independent Pull-up and Pull-down outputs enable the control of turn-on and turn-off speeds. Driver voltage is user-programmable to suit different gate requirements utilising an external resistor divider. An integrated 5V LDO is included to supply a digital isolator or other circuitry in high-side applications.

Featuring a wide 6V to 20V operating voltage range and with a strong 1.3-Ohm Pull-up and 0.5-Ohm Pull-down resistance, the device is obtainable in a thermally enhanced DFN3x3-10L package.

Applications include switch-mode power supplies, AC/DC and DC-DC converters, Boost, Flyback, Forward, Half-Bridge and Full-Bridge converters, synchronous rectification circuits, solar inverters, motor control and UPS.