New MOSFETs deliver increased power density without compromising system reliability

18-03-2024 | Infineon | Power

Infineon Technologies AG has introduced the new CoolSiC MOSFETs 2000V in the TO-247PLUS-4-HCC package to satisfy designers' demand for increased power density without compromising the system's reliability even under demanding high voltage and switching frequency conditions. The MOSFETs deliver a higher DC link voltage, so the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14mm and clearance distance of 5.4mm. With low switching losses, the devices are excellent for solar (e.g. string inverters), energy storage systems, and EV charging applications.

The product family is ideal for high-DC link systems with up to 1500V DC. Compared to 1700V SiC MOSFETs, the devices also deliver a sufficiently high overvoltage margin for 1500VDC systems. The MOSFETs provide a benchmark gate threshold voltage of 4.5V and are equipped with a robust body diode for hard commutation. Due to the XT connection technology, the components supply first-class thermal performance. They are also highly resistant to humidity.

In addition to the CoolSiC MOSFETs 2000V, the company will soon launch the matching CoolSiC diodes: The first launch will be the 2000V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are especially suited to solar applications. A matching gate driver portfolio is also available.


By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.