New P-channel MOSFETs reduce power consumption in automotive applications

07-02-2024 | Toshiba | Power

Toshiba Electronics Europe GmbH has released two more -60V P-channel MOSFETs based on its U-MOS VI process. This expands its range of devices suited to automotive applications such as load switches, semiconductor relays and motor drives.

The new XPH8R316MC and XPH13016MC are already qualified to meet AEC-Q101 – the automotive reliability standard. As part of this, they are housed in an SOP Advance(WF) package – a surface mount style with a wettable flank terminal structure. This enables AOI of the solder joints – key to reliability in harsh automotive environments. An added advantage is the copper connectivity within the package that lowers package resistance, improves efficiency and reduces heat build-up.

The XPH8R316MC is rated for -90A continuous drain current (ID), and the XPH13016MC is rated for an ID of -60A. The pulsed drain current (IDP) is double these values, -180A and -120A, respectively. These devices are rated for a drain-source voltage (VDSS) of -60V and can operate at channel temperatures (Tch) up to 175C.

The maximum drain-source on-resistance (RDS(ON)) of the XPH8R316MC is 8.3mOhm, approximately 25% lower than Toshiba’s existing TPCA8123. The XPH13016MC value is 12.9mOhm, approximately 49% lower than the TPCA8125. These highly reduced RDS(ON) values significantly reduce power consumption within automotive applications.


By Seb Springall