SDRAMs combine low-voltage operation with fast clock speeds

24-07-2023 | Alliance Memory | Automotive & Transport

Alliance Memory has expanded its high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in various densities. Providing an extension to the company's fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver -50% lower power ratings in the 200-ball FBGA package for higher power efficiency.

With low-voltage operation of 0.6V – compared to 1.1V for LPDDR4 SDRAMs – the devices improve battery life in portable electronics for the commercial, consumer, and industrial markets, including smart speakers, smartphones, security surveillance systems, and other IoT devices using AI and 5G technologies. Providing improved efficiency for advanced audio and ultra-high-resolution video in embedded applications, the SDRAMs produce fast clock speeds up to 1.86GHz for exceptionally high transfer rates of 3.7Gbps.

For automotive applications – including ADAS systems – the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40C to +105C, and on-chip ECC for increased reliability. The AS4C512M16MD4V-053BIN and AS4C512M32MD4V-053BIN operate over an industrial temperature range of -40C to +85C.

The AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN, and AS4C256M16MD4V-062BAN are organised as single-channel devices – each consisting of eight banks of 16 bits – while the AS4C512M32MD4V-053BIN provides two channels. All four components supply fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate.

These SDRAMs supply reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eradicating costly redesigns and part requalification.

By Seb Springall