New super junction N-channel power MOSFET series supports energy conservation

Toshiba Electronics Europe GmbH has introduced a new series of N-channel power MOSFETs. The first product in the 600V DTMOSVI series is the TK055U60Z1, based on the company's latest-generation process with a super junction structure.

The new MOSFET features an RDS(on) of only 55mOhm – a 13% improvement over similar devices in the company's established DTMOSIV-H series. Also, the RDS(on) x Qgd, the FoM for MOSFET performance, is enhanced by approximately 52%.

The new product uses the popular TOLL package, which offers a Kelvin connection for the signal source terminal. As a result, the source wire's inductance has less impact, reducing switching oscillation, which improves switching performance when the MOSFET operates at high gating speeds. The applied pin shaping provides proper solder connections, improves mounting reliability and makes visual inspection easier.

The maximum channel temperature (Tch) of the new product is 150C. The typical RDS(on) of 47mOhm is specified at a gate-source voltage of 10V.

Typical total gate charge (Qg), gate-drain charge (Qgd) and input capacitance (Cis) are 65nC, 15nC and 3680pF, respectively. These factors will enable the new device to switch at the swiftest possible speeds.

Typical applications include high-efficiency switching power supplies in data centres, power conditioners for photovoltaic generators, and UPS.

The company will continue expanding the series lineup and the already released 650V series products to support energy conservation by decreasing power loss in switching power supplies.