Infineon Technologies AG has released a new automotive power module: The HybridPACK Drive G2. It builds on its established HybridPACK Drive G1 concept of an integrated B6 package, providing scalability within the same footprint and expanding it to higher power and ease of use. The new power module will have different current ratings, voltage levels (750V and 1200V) and the company's next-generation chip technologies EDT3 (Si IGBT) and CoolSiC G2 MOSFET.
With a power range of up to 300kW within the 750V and 1200V classes, the new module delivers high ease-of-use and new features, including an integration option for next-generation phase current sensor and on-chip temperature sensing, enabling system cost improvements. The power module attains higher performance and power density via improved assembly and interconnect technology. Adopting new interconnect technology (chip sintering) and new materials (new black plastic housing) allows a higher temperature rating, producing higher performance and longer product life.
The first generation (G1) was introduced in 2017, using silicon EDT2 technology. It provides a power range of 100kW to 180kW in the 750V class. In 2021, the company extended its product family with the first generation of HybridPACK Drive Automotive CoolSiC MOSFETs, which permitted the inverter design to accomplish higher power up to 250kW within the 1200V class, longer driving range, smaller battery size and optimised system size and cost.