e-mode GaN FETs for low and high-voltage applications

16-05-2023 | Nexperia | Power

Nexperia has launched its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150V) and high (650V) voltage applications. By augmenting its cascode offering with seven new e-mode devices, it now supplies designers with the optimum selection of GaN FETs from a single supplier and its considerable portfolio of silicon-based power electronics components.

The company's new portfolio includes five 650V-rated e-mode GaN FETs (with RDS(on) values between 80mOhm and 190mOhm) in a selection of DFN 5mm x 6mm and DFN 8mm x 8mm packages. They enhance power conversion efficiency in high-voltage, low-power (<650V) datacom/telecom, consumer charging, solar and industrial applications. They can also be employed to design brushless DC motors and micro server drives for precision with higher torque and more power.

Also offered are a 100V (3.2mOhm) GaN FET in a WLCSP8 package and a 150V (7mOhm) device in a FCLGA package. These devices are suited for various low-voltage (<150V), high-power applications to deliver, for example, more efficient DC-DC converters in data centres, smaller LiDAR transceivers, lower noise class D audio amplifiers, faster charging (e-mobility and USB-C) and more power dense consumer devices such as mobile phones, laptops, and games consoles.

GaN FETs deliver the highest power efficiency in the most compact solution size in numerous power conversion applications, characteristics which substantially reduce the BOM. Consequently, GaN devices increasingly penetrate mainstream power electronics markets, incorporating server computing, industrial automation, consumer, and telecom infrastructure. GaN-based devices deliver the fastest transition/switching capability (highest dv/dt and di/dt) and provide superior efficiency in low- and high-power conversion applications. The excellent switching performance of these e-mode GaN FETs is attributable to very low Qg and QOSS values, while their low RDS(on) enables more power-efficient designs.

With this release, the company now offers a comprehensive offering of GaN FET products to serve the wide spectrum of power applications best suited to the technology, including cascode devices for high-voltage, high-power applications, 650V e-mode devices for high-voltage, low-power applications and 100/150V e-mode devices for low-voltage, high-power applications. Also, the e-mode GaN FETs are fabricated on an 8" wafer line for improved capacity and are qualified for industrial applications according to JEDEC standard.

By Seb Springall