World's largest GaN-on-Si IDM to debut at electronica

07-11-2022 | Innoscience Technology | Power

Innoscience Technology will play a full and active role at the upcoming electronica 2022 exhibition. Denis Marcon, general manager Europe at Innoscience, will participate in two forum discussions: Power Electronic Forum, 11:50am, Wednesday, November 16th, Stand A4.473: "How to take advantage of GaN power device performance." Markt & Technik Panel, 1:00pm, Wednesday, November 16th, Stand C3.557 (WEKA): "Gallium Nitride - Beyond consumer electronics."

Visitors to the company's booth can discuss the performance and applications of Low Voltage (30V-150V) GaN power devices, including the newly introduced JEDEC-qualified INN100W032A, rated for 100V and providing a low typical RDS(on) of only 2.4mOhm in a Solder Bar WLCSP package of just 3.5mm x 2.13mm package size. It will also demonstrate a 2.4kW, 48-12V bi-directional buck-boost converter for MHEV and industrial applications based on the INN100W032A. Additionally, it will demonstrate a 150W Buck-Boost converter using a 40V InnoGaN power device. This will demonstrate the solution size and performance benefits to power the next-generation USB-C, PD3.1 designs for battery-powered equipment and docking stations.

It will also showcase its bidirectional (BiGaN) power device, the first GaN device to enter inside the mobile phone into the battery management system of the OPPO's smartphone.

Next to this, Innoscience's team will also present the High Voltage (650V) power GaN device portfolio with a wide range of on-resistances to satisfy a variety of power converter applications.

The company will show several demos that display the performance of its extensive range of High Voltage GaN HEMTs. Explains Innoscience's senior business development manager, Christiam Gasparini: "This is a very compact and high-efficiency platform for many products, including consumer appliances through to industrial, computing, USB-C Power Delivery, medical and gaming, to name a few."

Denis Marcon, general manager Europe, Innoscience, commented: "We are excited to be at Electronica, the largest electronics event in the Western world, for the first time. We have both very competitive LV and HV GaN HEMTs available now in mass production and technical support teams in place to ensure that customers can take advantage of the benefits of GaN and leapfrog their competitors."

electronica 2022, Hall C3, booth 440, 15-18th November.


By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.