Joint lab accelerates development of advanced EV high-voltage applications

Navitas Semiconductor and VREMT announced the opening of an advanced, joint R&D power semiconductor laboratory to speed up EV power-system developments employing Navitas’ GaNFast power ICs and GeneSiC power MOSFETs and diodes.

Advances will enable EV power conversion systems to provide faster charging, faster acceleration, longer range and lower cost EVs, accelerating the world’s transition from fossil-fuel to clean-air vehicles.

Mr Shuibao GUO, vice GM of VREMT and Mr Charles ZHA, VP and GM of Navitas China, opened the joint lab in Ningbo, PRC. The joint lab will be further supported by Navitas’ own unique EV System Design Centre. The centre assists customers to maximise GaN and SiC performance advantages, including high-frequency magnetics design and advanced packaging and modules to produce higher power density, higher efficiency, and lower system cost power electronics systems for EVs.

“Navitas’ next-generation power semiconductors bring enormous value to VREMT’s design teams,” said Mr Guo. “We expect that Navitas’ high-frequency power-system expertise will greatly reduce time-to-prototype and time-to-market for VREMT systems.”

“It is an honour for Navitas to join with VREMT division to create this leading-edge, joint laboratory to create next-generation power systems for VREMT,” said Mr Zha. “This new partnership is aligned on both technical goals and also for sustainability, as both companies focus on carbon neutrality.”