Innoscience Technology offers a complete range of 650V E-mode GaN HEMT devices. New 190mOhm, 350mOhm and 600mOhm RDS(on) devices in industry-standard 8x8 and 5x6 DFN packages to add to previously announced 140mOhm, 240mOhm and 500mOhm RDS(on) parts, forming a notable portfolio of devices.
Significantly, the 650V HEMTs are all qualified to JEDEC standards for chip and package. Furthermore, the devices have also passed DHTOL reliability testing according to JEP180, which is the newly released JEDEC’s guidelines dedicated to GaN technology. Also, its 650V HEMT (InnoGaN) have undergone accelerated life tests beyond 1000V that provide lifetime calculations of 36 years at 80% of the rated voltage (520V; 150C; 0.01% failure rate).
The new devices also provide very good drain source voltage transient (VDS, transient) of 800V for non-repetitive events with an extended pulse time up to 200µs and a pulsed (VDS, pulsed) characteristics for repetitive pulse up to 100ns of 750V for the 190mOhm RDS(on) parts. These are best-in-class characteristics. Furthermore, similarly to the 650V products, the new devices all offer a strong ESD protection circuit embedded in the die to aid mass production assembly of these products in package and easy handling.
Potential applications of these new devices comprise PFC converters, DC-DC converters, fast battery chargers, LED drivers, notebook and all-in-one (AiO) adaptors and power supply for power tools, desktop PC, TV, and so on.
Comments Yi Sun, Sr VP of product development at Innoscience: “These new devices complete our 100-600mOhm device portfolio at 650V. I am especially happy to add the 650V/190mOhm, as it is becoming a standard in the GaN industry that offers greater flexibility to customers upon selecting suppliers for their applications.”