Mouser stocks the GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board from GaN Systems. This compact GaN e-mode half-bridge evaluation board packs some notable features while lowering the overall number of components and saving valuable board space.
The board provides two HEY1011-L12C GaN FET drivers and two 650V, 60 A GaN e-mode transistors arranged in a half-bridge configuration. The HEY1011 is an isolated gate driver optimised for driving GaN FETs with fast propagation delay and high peak source/sink capability for usage in high-frequency applications that need isolation, level-shifting or ground separation for noise immunity. Since the driver does not require secondary side power or bootstrap components, it frees up valuable board space and makes for a more cost-effective design.
To help ease the effects of gate-drain capacitor currents, the board employs a bipolar gate drive arrangement. The board can perform double pulse tests or connect a half-bridge to an existing LC power segment. The double pulse test is safely utilised to evaluate the switching characteristics of a power switch under hard switching conditions.
The half-bridge bipolar driver switch evaluation board is perfect for designers developing high-power wireless chargers, industrial inverters, motor drive/VFDs, data centres, residential energy storage systems, and other power electronics-based applications.