KIOXIA Europe GmbH announces that the sampling of the industry’s first UFS embedded flash memory devices supporting MIPI M-PHY v5.0 has begun. The new line-up uses the company’s BiCS FLASH 3D flash memory and is offered in three capacities: 128GB, 256GB and 512GB. The new devices provide high speed read and write performance and are aimed at various mobile applications, including leading-edge smartphones.
The new devices are next-generation UFS (MIPI M-PHY 5.0), which provides a theoretical interface speed of up to 23.2Gbps per lane (x2 lanes = 46.4Gpbs) in HS-Gear5 mode. Sequential read and write performance of the 256GB device is enhanced by approximately 90% and 70%, respectively, over past generation devices. Also, the random read and write performance of the 256GB device is bettered by approximately 35% and 60%, respectively, over previous generation devices. This next generation of UFS offers notable performance increases, allowing next-generation smartphones and other products to improve their capabilities and end user experiences in the 5G era and beyond.
“This UFS advancement will increase the performance and capabilities of next generation mobile applications, such as smartphones and other products. With this industry first UFS embedded flash memory device, KIOXIA again emphasizes its leadership position and commitment in UFS memory development,” states Axel Stoermann, vice president Memory Marketing and Engineering, KIOXIA Europe GmbH.