New automotive IGBTs for discrete traction inverters

09-03-2022 | Infineon | Automotive & Transport

Infineon Technologies AG launches the new EDT2 IGBTs in a TO247PLUS package. The devices are optimised for automotive discrete traction inverters and expand its portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs satisfy and exceed the industry standard AECQ101 for automotive components. Therefore, the devices can notably increase the performance and reliability of inverter systems. With the automotive micro-pattern trench-field-stop cell design, the devices are based on a technology that has already been successfully used in numerous inverter modules such as the EasyPACK 2B EDT2 or the HybridPACK.

As needed for the target applications, the product family is short-circuit-robust. Also, the TO247PLUS package provides a greater creepage distance for easy design-in. EDT2 technology is optimised for traction inverter and has a breakdown voltage of 750V, supporting battery voltages up to 470VDC, and notably lower switching and conduction losses.

The rated currents of the discrete EDT2 IGBTs are 120A and 200 A at 100C, each with a very low forward voltage, reducing conduction losses by up to 13% compared to the last generation. With a rated current of 200A, the AIKQ200N75CP2 is also the best-in-class discrete IGBT in a TO247Plus package. Thus, fewer devices are needed in parallel for a defined target power class. Also, power density increases, and system costs decrease.

Also, the EDT2 IGBTs offer an extremely narrow parameter distribution. The collector-emitter saturation voltage (V ce(sat)) difference between typical and maximum values is lower than 200mV, and the gate threshold voltage (V GEth) difference is smaller than 750mV. Furthermore, the thermal coefficient is positive. This allows easy parallel operation and provides system flexibility and power scalability for final designs. Moreover, the IGBTs provide smooth switching performance, low gate charge (Q G) and a high junction temperature (T vjop) of 175C.

By Natasha Shek