MOSFET uses a state-of-the-art trench semiconductor process with high reliability

16-03-2022 | Rutronik | Power

Infineon's CoolSiC MOSFETs, available now from Rutronik, use an optimised, state-of-the-art trench semiconductor process that allows the lowest application loss and the highest reliability in operation. The products, with voltage classes of 1700V, 1200V, and 65V and forward resistances from 27mOhm up to 1000mOhm, are ideal for integration in applications such as photovoltaic inverters, battery charging, energy storage, motor drives, UPS, auxiliary power supplies and SMPS ab.

The MOSFETs in discrete packages are excellent for PFC circuits, bidirectional topologies, and DC-DC converters or DC/AC inverters. They also impress with superior immunity to unwanted parasitic turn-on effects and low dynamic losses, even at zero-volt turn-off voltage in bridge topologies.

Using CoolSiC Trench technology, a flexible parameter set is enabled, which is employed to implement application-specific features in the respective product portfolio. The 650V CoolSiC MOSFETs, for example, provide optimised switching behaviour at high currents and low capacitances. They are intended for industrial applications such as servers, telecommunications, and motor drives. The 1200V MOSFET range is ideal for industrial and automotive applications such as onboard chargers/PFC, auxiliary inverters, and UPS. The flyback typology characterises the 1700V variant, making it suitable for energy storage systems, fast charging of electric vehicles, SMPS, and solar energy system solutions.

The EiceDRIVER provides a range of selected driver ICs that satisfy the needs of high-speed SiC MOSFET switching. Combined, the products facilitate improved efficiency, decreased cooling requirements, space and weight savings, part count reduction, and increased system reliability with a longer lifetime at lower system cost.

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