Next-gen GaN power IC upgrade offers faster charging and more extended range

12-01-2022 | Navitas Semiconductor | Automotive Technologies

Navitas Semiconductor offers the opening of a new EV Design Center, further extending into higher-power GaN markets. GaN-based OBCs are estimated to charge 3x faster with up to 70% energy savings in comparison to legacy silicon solutions. GaN OBCs, DC-DC converters, and traction inverters are estimated to extend EV range or lower battery costs by 5% and speed EV adoption worldwide by three years. An EV-upgrade to GaN is estimated to reduce road-sector CO2 emissions by 20%/year by 2050, the target of the Paris Accord.


GaN devices are the leading edge of power semiconductor technology, operating 20x faster than traditional silicon chips. Navitas’ GaNFast power ICs combine GaN power, GaN drive, protection and control. High speed and high efficiency translate into new industry benchmarks in energy savings, lower cost, high power density, and higher reliability.


Respected industry-expert, Mr Hao SUN, the new Sr. director of the Shanghai Design Center said, “The design centre will develop schematics, layouts, and firmware for full-function, productise EV power systems. Navitas will work in partnership with OBC, DC-DC and traction system companies to create innovative, world-class solutions with the highest power density and highest efficiency to propel GaN into mainstream eMobility.”


“The Navitas EV team has rich talent and proven experience delivering power systems,” said Charles ZHA, VP and GM of Navitas China. “EMobility is an exciting expansion market for GaN, with an estimated $250 potential content per EV. Market-by-market, Navitas is making swift progress into higher-power applications, like EV, data centre and solar.”

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