Magnachip Semiconductor Corporation has launched 11 new generation high voltage 600V SJ MOSFETs.
The new 2.5th generation (2.5G) 600V SJ MOSFETs were created utilising new designs based on the newest process technology to improve switching functionality by more than 10% compared to past generations. As a result, it has delivered lower switching loss and better power efficiency. For applications needing high ESD ruggedness, a Zener diode is embedded between a gate and source to avoid damage to a MOSFET from an external surge or ESD.
The new product family supports an Rds(on) of 190-580mOhm and is supplied in standard packaging formats, such as DPAK TO-220F and TO-220SF. These new 2.5G products can be widely employed in products and applications that include TVs, lighting infrastructure, fast chargers, adapters, PC power and industrial power supplies. They are also ideal for hard- and soft-switching topologies.
"With industry-proven technologies and products, Magnachip has satisfied the latest design requirements for both consumer and industrial markets," said YJ Kim, CEO of Magnachip. "We will continue to develop cutting-edge power solutions like high-voltage SJ MOSFETs for automotive to expand our product portfolio and bring new capabilities to more applications."