GaN power ICs delivers size, weight and CO2-reduction benefits

07-01-2022 | Navitas Semiconductor | Semiconductors

Navitas’ GaNFast power ICs integrate GaN power and drive with protection and control to provide simple, small, fast and efficient performance. With over 130 patents issued or pending, and significant trade secrets comprising a proprietary PDK, it believes it has a multi-year lead in next-generation GaN power ICs.

The new Dell 60W fast charger is an ‘in-box’ optional upgrade from a legacy silicon-based charger. Measuring just 66mm x 55mm x 22mm (94cc) and a lightweight 175g, the new GaNFast charger is 50% smaller and 25% lighter than the earlier silicon-based generation.

“Dell customers appreciate leading-edge technology with innovation, performance and quality,” said Gene Sheridan, CEO and co-founder of Navitas. “They also appreciate that GaNFast technology delivers significant benefits to the planet. In fact, every GaNFast power IC shipped reduces CO2 emissions by 4kg.”

Two GaNFast power ICs are employed in the adapter in a high-speed ACF topology, which allows the usage of an advanced ‘planar’ transformer to achieve the slimline 22mm thin profile of the charger.

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