12-11-2021 | Nexperia | Semiconductors
Nexperia has entered into the high-power SiC diodes market with the introduction of 650V, 10A SiC Schottky diodes. A strategic move from this supplier of efficient power GaN FETs expands its high-voltage wide bandgap semiconductor device offering.
Its first SiC Schottky diode is an industrial-grade device with 650V repetitive peak reverse voltage (VRRM) and 10A continuous forward current (IF), intended to consolidate ultra-high performance and high efficiency with low energy loss in power conversion applications. Presenting the added benefit of a high-voltage compliant real two-pin (R2P) package with higher creepage distance, it is offered in a selection of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. Engineering samples are available on request. The company plans to continuously expand its portfolio of SiC diodes, leading to a total of 72 products working at voltage levels of 650V and 1200V and with currents in the range of 6-20A.
In a frequently energy-conscious world, there is a burgeoning desire for high power applications with excellent efficiency and power density. In this regard, Silicon is fast nearing its physical limits. According to Mark Roeloffzen, general manager of the Bipolar Discretes Group at Nexperia: “Wide bandgap semiconductors like Gallium Nitride and Silicon Carbide are now well placed to meet the stringent needs of high-volume applications, bringing the promise of higher efficiency, greater power density, lower system cost and reduced operating costs for original equipment manufacturers. Nexperia’s diverse portfolio of SiC diodes will bring greater choice and availability to this market.”