Companies jointly accelerate technology development for GaN power devices

07-09-2021 | Infineon | Power

Infineon Technologies and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their GaN technology, providing higher efficiency and power density levels. The exceptional performance and reliability, together with the capability of 8" GaN-on-Si wafer production, mark Infineon’s strategic outreach to the increasing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650V GaN HEMT. The devices will provide for ease of use and give an improved price-performance ratio, targeting, among others, high and low-power SMPS applications, renewables, motor drive applications.

“In addition to the same high-reliability standards as for Gen 1, with the next generation customers will benefit from even easier control of the transistor as well as a significantly improved cost position, thanks to moving to an 8" wafer manufacturing,” says Andreas Urschitz, president of Infineon’s Power and Sensor Systems Division. Like the jointly developed Gen 1 devices, known as Infineon’s CoolGaN and Panasonic’s X-GaN, the second generation will be based on the normally-off GaN-on-silicon transistor structure. This, in combination with the unmatched robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure, makes these components the product of choice and one of the most long-term reliable solutions in the market.

“We are delighted to extend our partnership and collaboration with Infineon on GaN components. Within the joint approach, we will be able to apply Gen1 and Gen2 devices on high quality and based on latest innovation developments”, says Tetsuzo Ueda, associate director of Engineering Division, Industrial Solutions Company, Panasonic Corporation.

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