First radiation-tolerant NOR Flash memory for space-grade FPGAs

23-07-2021 | Infineon | Semiconductors

Space-grade FPGAs need reliable, high-density non-volatile memories that include their boot configurations. To address the increasing demand for high-reliability memories, Infineon Technologies has announced the industry’s first high-density RadTol NOR Flash memory products qualified to MIL-PRF-38535’s QML-V flow (QML-V Equivalent). The QML-V flow signifies the highest quality and reliability standard certification for aerospace-grade ICs.


The 256Mb and 512Mb RadTol NOR Flash non-volatile memories provide superior, low-pin count, single-chip solution for applications including FPGA configuration, image storage, microcontroller data and boot code storage. When employed at higher clock rates, the data transfer supported by the devices matches or exceeds conventional parallel asynchronous NOR Flash memories while dramatically decreasing pin count. The devices are radiation-tolerant up to 30krad (Si) biased and 125krad (Si) unbiased. At 125C, the devices support 1,000 Program/Erase cycles and 30 years of data retention and at 85C, 10k Program/Erase cycles with 250 years of data retention.


“Our radiation-tolerant dual QSPI non-volatile memories are fully supported by the latest space-grade FPGAs. They enable a superior, low pin count, single-chip select solution to configure processors and FPGAs,” said Helmut Puchner, VP Fellow of Aerospace and Defense at Infineon Technologies. “The entire image for the Xilinx Kintex UltraScale XQRKU060, for example, can be loaded in about 0.2 seconds in dual-quad mode.”


The devices can be programmed in-system through the FPGA or a standalone programmer, provided in the same 36-lead ceramic flat package. The company's development kit and software further allow easy design implementation.

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