Input protected LNAs with GaN semiconductor technology

21-06-2021 | Fairview | Subs & Systems

Fairview Microwave Inc. offers a new series of LNAs that are ideal for use in electronic defence, radar, space systems, R&D, prototype/proof of concept, ECM, microwave radio, VSAT, SATCOM, and test & measurement applications.


This new series of input protected LNAs feature GaN semiconductor technology which offers robust input power protection. GaN Semiconductors assure state-of-the-art performance with a superior power-to volume ratio that is perfect for broadband high-power applications. These amplifiers also give notably higher breakdown voltage that provides for higher toleration of RF input power signal levels while sustaining excellent low noise figure performance. This is possible without the necessity of an input protective limiter circuit that is needed for other semiconductor technologies and may contribute to higher noise figure levels.


These new input protected LNAs incorporate desirable microwave and mm-wave frequency bands. Further features include high gain up to 46dB typical, high RF input power handling up to 10W CW, broadband frequencies ranging from 1GHz to 23GHz and low noise figures as low as 1.5dB typical. They possess rugged, mil-grade compact coaxial designs, excellent thermal properties and SMA connectors.


“RF designers will find these industry-leading, state-of-the-art, GaN LNAs extremely useful in receive chains that may be sensitive to higher RF input signal conditions,” said Tim Galla, senior product line manager.

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