Power GaN solution reduces component count and minimises system costs

29-04-2021 | Nexperia | Power

Nexperia has announced volume availability of its second-generation 650V power GaN FET device family, providing notable performance advantages over earlier technologies and competitive devices. With RDS(on) performance down to 35mOhm (typical), the new power GaN FETs target single-phase AC/DC and DC-DC industrial SMPS, ranging from 2kW to 10kW, particularly server and telecoms supplies that must satisfy 80 PLUS Titanium efficiency regulations. The devices are also an outstanding fit for solar inverters and servo drives in the same power range.


Offered in TO-247 packaging, the new 650V H2 power GaN FETs provide a 36% reduction in die size for a given RDS(on) value for greater stability and efficiency. The cascode configuration removes the requirement for complicated drivers, speeding up time to market. The devices give exceptional performance in both hard-switching and soft-switching configurations, providing designers maximum flexibility.


Dilder Chowdhury, Nexperia’s GaN strategic marketing director, explains: “Titanium is the most demanding of the 80 PLUS specifications, requiring >91% efficiency under full load conditions (>96% at 50% load). Achieving this level of performance in server power applications operating at 2kW and above, using conventional silicon components, is complex and challenging.Nexperia’s new power GaN FETs are ideally suited to an elegant, bridgeless totem-pole configuration that uses fewer components and reduces both physical size and costs.”

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