P-channel MOSFET increases efficiency and power density

09-04-2021 | Vishay | Automotive Technologies

Vishay Intertechnology has introduced what it claims is the world's best AEC-Q101 qualified p-channel -80V TrenchFET MOSFET. With the lowest on-resistance of any -80V p-channel device, the new Vishay Siliconix SQJA81EP improves power density and efficiency in automotive applications. In the compact 5.13mm x 6.15mm PowerPAK SO-8L single package with gullwing leads, the device provides on-resistance down to 17.3mOhm maximum/14.3mOhm typical at 10V.

The on-resistance of this automotive-grade MOSFET is 28% lower than the nearest competing device in the DPAK package — while providing a 50% smaller footprint — and 31% lower than previous-generation solutions. These values convert into energy savings by minimising power losses from conduction whilst providing higher output for improved power density. Combined with its superior gate charge down to 52nC at 10V — which lessens losses from gate driving — the result is best in class gate charge times on-resistance, a critical FOM for MOSFETs employed in power conversion applications.

With high-temperature operation to +175C, the device gives the ruggedness and reliability needed for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting. The device's gullwing leads provide increased AOI capabilities and offer mechanical stress relief for better board-level reliability.

The device's -80V rating gives the safety margin needed to support several popular input voltage rails, including 12V, 24V, and 48V systems. The MOSFET's increased power density saves PCB space in those systems by decreasing the number of components required in parallel. Also, as a p-channel device, the device facilitates simpler gate drive designs that do not need the charge pump required by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the MOSFET is 100% Rg and UIS tested.

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