In applications wherever MOSFETs are switched at low frequency, high-power product designs must satisfy numerous key characteristics: They have to reduce conduction losses, give optimal thermal behaviour, and facilitate more compact and lighter systems – all while sustaining the highest quality at a low cost. To satisfy these requirements, Infineon Technologies AG has enhanced the 600V CoolMOS S7 family with two new optimised devices for static switching applications: the industrial-grade CoolMOS S7 10mOhm and the automotive-grade CoolMOS S7A.
The CoolMOS S7 10mOhm has a unique low on-resistance (RDS(on)) for 600V super junction MOSFETs, making it excellent for applications where minimal conduction losses are critical, such as off-the-shelf SSR. In contrast, the automotive-grade CoolMOS S7A addresses system performance demands set by solid-state circuit breakers and diode paralleling/replacement for high power/performance designs in automotive applications, including the High Voltage (HV) eFUSE, HV eDisconnect battery disconnect switch, and on-board chargers.
The chips come with the lowest RDS(on) in the market and best-in-class RDS(on) x A x cost. Furthermore, they have been integrated into an innovative top-side cooled (TSC) QDPAK SMD package, which offers excellent thermal behaviour, making it a smaller option to THD devices such as TO-247. Furthermore, with moving from THD to a surface-mounted device with QDPAK, a 94% reduction of height can be realised, allowing higher power density solutions. With the low conduction losses of the devices, designers can limit the size of heat sinks up to 80 percent and extend the current and voltage ratings without altering the form factor.