GaN Systems offers a new reference design for the highest power density, high efficiency GaN-based 65W Active Clamp Flyback (ACF) charger in collaboration with Silanna Semiconductor. The reference design is now obtainable at Silanna Semiconductor. It provides an easy design for ACF USB-C PD GaN chargers, decreasing design cycles and product time to market for customers.
This solution eliminates the difficulties of an ACF topology design, which typically has two transistors in the high-side and low-side configuration. The new charger reference design uses Silanna’s SZ1130 ACF PWM controller and GaN Systems GS-065-008-1-L 650V GaN power transistor, with the high-side FET integrated into the controller. This design provides lower BoM costs by employing a conventional RM8 transformer and 100V SR MOSFET on the secondary side.
“Silanna Semiconductor’s SZ1130 chip is a great fit for 65W ACF designs and is another example of a company developing an innovative solution in recognition of the growing importance of GaN to power engineers,” says Jim Witham, CEO, GaN Systems. “As GaN becomes the standard building block across markets, it's good to see that the ecosystem continues to grow.”