Alpha and Omega Semiconductor Limited has released a new AEC-Q101 qualified 1200V SiC aSiC MOSFETs in an optimised TO-247-4L package. Excellent for the high efficiency and reliability requirements of EV on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs offers what is claimed to be the industry-leading lowest on-resistance available for an automotive qualified TO-247-4L with a standard gate drive of 15V.
The company's 1200V automotive-grade aSiC MOSFETs are especially designed for demanding applications by providing superior switching performance and efficiency over standard silicon devices.
The AOM033V120X2Q is a 1200V/33mW SiC MOSFET based on the company's second-generation aSiC MOSFET platform packaged in an optimised TO-247-4L. Unlike the standard three-lead package, utilising an extra sense lead decreases the package inductance effects. It allows the device to function at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging. The recommended gate driving voltage of only 15V provides for the broadest compatibility of gate drivers for simplicity of adoption in a mixture of system designs. Also, aSiC MOSFETs provide a very low increase in on-resistance up to the rated 175C to minimise power losses and increase efficiency.
“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging. With our release of these automotive qualified 1200V aSiC MOSFETs, AOS can provide designers with next-generation semiconductor technology to increase these efficiency targets. Our customers have selected our technology due to the combination of product performance, reliability, and volume capable supply chain,” said David Sheridan, senior director of Wide Bandgap Products at AOS.