Vishay Intertechnology has released a new AEC-Q101 qualified p-channel -100V TrenchFET MOSFET created to increase power density and efficiency in automotive applications. Not only is the Vishay Siliconix SQJ211ELP claimed to be the industry's first such device in the compact 5mm x 6mm PowerPAK SO-8L package with gullwing leads, but it also offers best in class on-resistance down to 30mOhm maximum/24mOhm typical at 10V.
When compared to the nearest competing p-channel devices in the DPAK and D²PAK packages, the device provides 26% and 46% lower typical on-resistance, respectively, while giving a 50% and 76% smaller footprint. The device's low on-resistance turns into energy savings by decreasing power losses from conduction, while its superior gate charge down to 45nC at 10V diminishes losses from gate driving.
With high-temperature operation to +175C, the MOSFET offers the ruggedness and reliability demanded for automotive applications such as reverse polarity protection, high side load switching, battery management, and LED lighting. Also, the device's gullwing leads provide for increased AOI capabilities and offer mechanical stress relief for increased board-level reliability.
The device's -100V rating gives the safety margin needed to support several popular input voltage rails, including 12V, 24V, and 48V systems. Also, as a p-channel MOSFET, the device facilitates simpler gate drive designs that don't need the charge pump required by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the MOSFET is 100% Rg and UIS tested.