Three-phase gate driver offers superior robustness

02-12-2020 | Infineon | Power

Infineon Technologies widens its level-shift EiceDRIVER portfolio with a 1200V three-phase gate driver. It is founded on the company’s unique silicon-on-insulator (SOI) technology. The device offers leading negative VS transient immunity, excellent latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These special features decrease BOM and facilitate a more robust design with a compact form factor ideal for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 offers 350mA/650mA source and sink drive ability. It stops shoot-through due to the integrated dead time. The integrated over-current protection comparator with a +/-5% reference threshold accuracy gives fast, repeatable and dependable switch protection. The integrated bootstrap diodes provide ultra-fast reverse recovery with an extremely low typical resistance of 40Ohm.

Negative VS transient voltage immunity of -100V with repeating 700ns wide pulses helps excellent robustness and reliable operation. The low and high side voltage supplies provide independent UVLO for safe operation. A unique DSO-24 footprint splits the low and high voltage on opposite sides of the package to further improve clearance and creepage.

The device can also be supplied in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions) with a unique footprint. This package provides a reduced pin-count leading to a superior 2kV ESD rating according to human-body model.

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