X-FAB Silicon Foundries SE has released new medium-voltage transistors – complementing the company’s 180nm BCD-on-SOI technology platform (XT018).
The new medium-voltage devices incorporate voltages from 12V to 32V. Including that customers now possess access to a comprehensive portfolio of different voltage options – comprising a 10V to 200V voltage range. These new complementary NMOS/PMOS devices support automotive AEC-Q100 grade 0 designs and achieve competitive on-resistance figures combined with robust safe-operating areas for Rdson, Idsat and Vth. Designs can be optimised for operational performance and size by choosing the most appropriate transistors. The company's technology is also the only one that provides a comprehensive range of automotive grade-0 qualified memory options, including SONOS-based Flash and embedded EEPROM.
As well as the availability of the new medium-voltage devices, the company has also released the full volume production of the 70V to 125V high-voltage transistors that it first issued last summer. These devices are principally aimed at the growing market for automotive 48V board net and battery management system ICs.
“We are excited to see increasing customer adoption of our 180nm BCD-on-SOI process,” states Tilman Metzger, product marketing manager high-voltage at X-FAB. “Closing up the gap on the medium-voltage side in XT018 will enable our customers to design more cost-effective products, such as 100V and 200V high-side gate drivers and smart integrated brushless DC motor drivers.”