SiC Schottky diodes ideal for enhancing efficiency, reliability and thermal management

25-03-2019 | Littelfuse | Semiconductors

Littelfuse has two additions to its increasing line of second-generation, 650V, AEC-Q101-qualified SiC Schottky Diodes. Both series provide power electronics system architects with a mixture of performance advantages over traditional silicon-based devices, comprising high surge capability, negligible reverse recovery current, and a maximum operating junction temperature of 175C. This makes them excellent for applications in which enhanced efficiency, reliability, and thermal management are desirable.

The LSIC2SD065DxxA Series SiC Schottky Diode is offered with current ratings of 6A, 10A, or 16A in a TO-263-2L package; the LSIC2SD065ExxCCA Series SiC Schottky Diode is provided with current ratings of 12A, 16A, 20A, or 40A in a TO-247-3L package.

Typical applications for the new devices include EV charging stations; Buck/boost stages in DC-DC converters; Free-wheeling diodes in inverter stages; High-frequency output rectification; and PFC.

“These additions to our fast-growing 650V SiC Schottky Diode family allow us to offer a broader selection of current ratings and package designs suitable for a wider range of applications,” said Christophe Warin, Littelfuse Silicon Carbide product marketing manager. “These new SiC Schottky Diodes enable a variety of design optimisation opportunities, including increased power density, higher efficiency and potentially lower bill of materials costs.”

Related product news