Bipolar transistors enable higher power density

27-02-2019 | Diodes Inc | Semiconductors

The Diodes Incorporated family of NPN and PNP power bipolar transistors supplied in a small form factor (3.3mm x 3.3mm), provide increased power density for applications demanding up to 100V and 3A. Offering a smaller form factor, these NPN and PNP transistors allow higher power density designs in gate-driving power MOSFETs and IGBTs, PNP LDOs, linear DC-DC step-down regulators, and load switch circuits.

Aimed at both industrial and consumer markets, the DXTN07xxxxFG (NPN) and DXTP07xxxxFG (PNP) series range from 25V to 100V VCEO; they also highlight total power dissipation of 2W and are rated up to +175C operation. The transistors are housed in the compact PowerDI3333 surface mount package measuring just ?3.3mm x 3.3mm x 0.8mm, occupying 70% less PCB space than the traditional SOT223, while producing similar power dissipation in a more thermally efficient package.

The package increases PCB throughput by featuring wettable flanks, which help promote the high-speed, AOI of solder joints, thus excluding the need for X-ray inspection.

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