SiC diodes offer higher efficiency, power density and lower system costs
ON Semiconductor has extended its SiC diode portfolio by launching its newest family of 650V SiC Schottky diodes. The diodes’ cutting edge, silicon carbide technology offers higher switching abilities with lower power losses and effortless paralleling of devices.
The family of 650V SiC diodes includes surface-mount and through-hole packages ranging from 6A to 50A. All of the diodes offer zero reverse recovery, low forward voltage, temperature independent current stability, high surge capacity and positive temperature coefficient.
The new diodes are targeted at engineers developing PFC and boost converters for various applications including solar PV inverters, telecom power and data centre power supplies while facing challenges to deliver smaller footprints at higher efficiencies.
"This new 650 V family of SiC diodes complement the company’s existing 1200 V SiC devices, bringing a broader product range to our customers,” said Simon Keeton, senior vice president and general manager, MOSFET Business Unit, ON Semiconductor. “Utilising the unique characteristics of wide band gap materials, SiC technology offers tangible benefits over silicon, and their robust construction provides a dependable solution in applications in challenging environments. Our customers will benefit from simplified, better performing, smaller footprint designs as a result of these new devices.”