Half-bridge power stage provides significant advantages for power conversion

The LMG5200 device from Texas Instruments is an 80V, 10A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode GaN FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. These devices provide significant advantages for power conversion as they have near zero reverse recovery and small input capacitance CISS. All the power stages are mounted on a completely bond-wire free package platform with minimised package parasitic elements. The device is available in a 6mm × 8mm × 2mm lead-free package and can be simply mounted on PCBs. The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. This is an excellent solution for applications requiring high-efficiency, high-frequency operation in a small form factor. When used with the TPS53632G controller, the device enables direct conversion from 48V to point-of-load voltages (0.5V-1.5V).