MOSFET gate-driver ICs address demand for driving battery-powered BLDC motors
The DGD0506 and DGD0507 high-frequency gate-driver ICs introduced by Diodes Incorporated are designed for driving two external N-channel MOSFETs in a half-bridge configuration. A 50V rating suits a wide range of motor driving requirements, especially brushless DC (BLDC) motors, which are increasingly being used in battery-powered applications such as drones, fans, e-cigarettes, and cordless power tools including drills, handheld vacuum cleaners and blenders.
Logic level inputs (from 2.5V) allow the drivers to be directly controlled from 3.3V MCUs, while the output steps up to the Vcc supply (8V to 14V) to ensure the MOSFET is fully enhanced to reduce conduction losses. With 1.8A source and 2.5A sink current capability, these drivers minimize switching time of very low RDS(ON) MOSFETS, including their own DMT4002LPS, increasing overall system efficiencies.
The gate drivers integrate a bootstrap diode to reduce component count and, along with the small form-factor 3mm x 3mm DFN3030 package, benefits space and weight-constrained applications. Requiring only a single input, the DGD0506 half-bridge minimizes MCU GPIO pin count along with the design flexibility to program deadtime from 70ns to 420ns. For shorter deadtimes, the DGD0507 has separate high- and low-side inputs enabling higher switching frequencies with a 35ns max propagation delay that is matched within 5ns. This, along with cross-conduction prevention logic, protects the MOSFETs by ensuring that the high and low outputs are not both on at the same time. Undervoltage lockout (UVLO) circuitry also protects the MOSFETs against a loss of supply.