Power MOSFETs offer space-saving alternatives to conventional solutions

New Yorker Electronics offers the Vishay 600V E Series power MOSFETs in the compact PowerPAK 8x8 package. The construction of the device allows one of the source pins to be arranged as a dedicated Kelvin source connection that separates the gate drive return path from the main current-carrying source terminals. This prevents the L x di / dt voltage drop in the high-current path from reducing the gate drive voltage that is applied to the E Series MOSFETs. This leads to faster switching and more noise immunity in power supply designs for telecom, server, computing, lighting, and industrial applications. The Siliconix SiHH26N60E, SiHH21N60E, SiHH14N60E and SiHH11N60E, all 2016 Super 12 featured products, offer large drain terminals for low thermal resistance and Kelvin source connections that can increase efficiency by improving gate drive signals. This new low-profile, surface-mount power package provides a space-saving alternative to conventional TO-220 and TO-263 solutions – plus it is RoHS compliant, halogen free and 100% lead (Pb)-free. They feature low on-resistance down to 0.135ohm at 10V, ultra-low gate charge down to 31nC and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. These values translate into extremely low conduction and switching losses to save energy.